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FGH40N60SF 600V, 40A Field Stop IGBT
March 2009
FGH40N60SF
600V, 40A Field Stop IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) =2.3V @ IC = 40A * High input impedance * Fast switching * RoHS compliant
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Applications
* Inverter, UPS, SMPS, PFC
E
C G
COLLECTOR (FLANGE)
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C
o o
Ratings
600 20 80 40 120 290 116 -55 to +150 -55 to +150 300
Units
V V A A A W W
o o o
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.43 40
Units
o o
C/W C/W
(c)2008 Fairchild Semiconductor Corporation
1
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FGH40N60SF Rev.A
FGH40N60SF 600V, 40A Field Stop IGBT
Package Marking and Ordering Information
Device Marking
FGH40N60SF
Device
FGH40N60SFTU
Package
TO-247
Packaging Type
Tube
Max Qty Qty per Tube
30ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 -
0.6 -
250 400
V V/oC A nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 40A, VGE = 15V IC = 40A, VGE = 15V, TC = 125oC 4.0 5.0 2.3 2.5 6.5 2.9 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2110 200 60 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 40A, VGE = 15V VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC 25 42 115 27 1.13 0.31 1.44 24 43 120 30 1.14 0.48 1.62 120 14 58 54 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGH40N60SF Rev. A
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FGH40N60SF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120 100
Collector Current, IC [A]
TC = 25 C 20V 15V
o
Figure 2. Typical Output Characteristics
120 100
Collector Current, IC [A]
TC = 125 C
o
20V
15V
12V
80 60 40
12V
80 60 40 20
10V
10V
20
VGE = 8V
VGE = 8V
0 0.0
1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]
6.0
0 0.0
1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]
6.0
Figure 3. Typical Saturation Voltage Characteristics
80
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
120
Common Emitter VCE = 20V
Collector Current, IC [A]
60
TC = 25 C TC = 125 C
o
Collector Current, IC [A]
o
TC = 25 C TC = 125 C
o
o
80
40
40
20
0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4
0 6 8 10 12 Gate-Emitter Voltage,VGE [V] 13
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
4.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = -40 C
o
3.5
80A
16
3.0 2.5
40A
12
8
80A
2.0 1.5 1.0 25
IC = 20A
4
IC = 20A
40A
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
4
8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGH40N60SF Rev. A
3
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FGH40N60SF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
o
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
o
Collector-Emitter Voltage, VCE [V]
TC = 25 C
TC = 125 C
16
16
12
12
8
40A 80A
8
40A 80A
4
IC = 20A
4
IC = 20A
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
4
8 12 16 Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
5000
Common Emitter VGE = 0V, f = 1MHz
Figure 10. Gate charge Characteristics
15
Common Emitter
o
4000
Capacitance [pF]
Ciss
TC = 25 C
o
Gate-Emitter Voltage, VGE [V]
TC = 25 C
12
Vcc = 100V 200V 300V
3000
Coss
9
2000
6
1000
Crss
3
0 0.1
0
1 10 Collector-Emitter Voltage, VCE [V]
30
0
50 100 Gate Charge, Qg [nC]
150
Figure 11. SOA Characteristics
400
Figure 12. Turn-on Characteristics vs. Gate Resistance
200
10s
100
Collector Current, Ic [A]
100
10
100s 1ms
Switching Time [ns]
1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
10 ms DC
tr
0.1
td(on)
Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C
o o
0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000
10 0 10 20 30 40 Gate Resistance, RG [] 50
FGH40N60SF Rev. A
4
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FGH40N60SF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Gate Resistance
5500
Common Emitter VCC = 400V, VGE = 15V IC = 40A
Figure 14. Turn-on Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Switching Time [ns]
TC = 125 C
o
Switching Time [ns]
1000
TC = 25 C td(off)
o
TC = 125 C
tr
100
100
tf
td(on)
10 0 10 20 30 40 50
Gate Resistance, RG []
10 20
40
60
80
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 10 TC = 25 C td(off)
o o
Figure 16. Switching Loss vs. Gate Resistance
10
Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 C TC = 125 C
o o
Switching Loss [mJ]
Switching Time [ns]
TC = 125 C
Eon
100
tf
1
Eoff
10 20
0.2 0.3
40
60
80
0
10
Collector Current, IC [A]
20 30 40 Gate Resistance, RG []
50
Figure 17. Switching Loss vs. Collector Current
30 10
Switching Loss [mJ]
Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C
o o
Figure 18. Load Current vs. Frequency
140
VCC = 400V
120
Eon
load Current : peak of square wave
Load Current [A]
100 80 60 40 20
Duty cycle : 50% T = 100 C
C o
1
Eoff
0.1 20 30 40 50 60 70 80
0 1
Power Dissipation = 116W
Collector Current, IC [A]
10 100 Frequency [kHz]
1000
FGH40N60SF Rev. A
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FGH40N60SF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 19.Turn off Switching SOA Characteristics
200 100
Collector Current, IC [A]
10
Safe Operating Area VGE = 15V, TC = 125 C
o
1 1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Figure 20. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2 0.1 0.05 0.02 0.01 single pulse
0.01
PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGH40N60SF Rev. A
6
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FGH40N60SF 600V, 40A Field Stop IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
FGH40N60SF Rev. A
7
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Rev. I40
(c) 2008 Fairchild Semiconductor Corporation
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